SIMICS

Silicon Microwave Integrated Circuits and Systems

Group Director

Prof. Kenneth. K. O

 

539 New Engineering Building

PO Box 116130
University of Florida
Gainesville, FL 32611-6130

Phone: 352-392-6618

Fax: 352-392-8381

 

 

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The Silicon Microwave Integrated Circuits and Systems Research Group (SIMICS) aims to further application of low-cost, silicon based technologies in the 1 to 20 GHz frequency range in order to reduce the cost of communication technologies to a larger cross-section of the population. Currently there are 22 graduate students in the group developing systems, circuits and components operating from 50 MHz to 500 GHz using silicon based technologies.

Recent accomplishments have been in the field of development, design and demonstration of a low-power transceiver using on-chip antennas in the 24 GHz ISM band. This work has been towards realizing a true single-chip radio called the µnode. Record breaking VCOs operating at ~200 GHz, Terra-hertz Schottky barrier diodes and detector circuits operating around 200 GHz have also been successfully demonstrated in the recent past. Formerly, using a 0.1 um CMOS technology on silicon-on-oxide and silicon-on-sapphire films, SiMICS has demonstrated 13 GHz tuned amplifiers in collaboration with the IBM T.J. Watson research Center and US Navy. These are the first amplifiers implemented in CMOS technologies to have demonstrated one of the first fully integrated CMOS low noise amplifiers (LNAs) for 900 MHz operation. In support of the 900 MHz LNA activity, the group also reported an approach for improving characteristics of integrated inductors using a biased n-well. In order to increase power handling capabilities of integrated MOS amplifiers, the group also has developed a Schottky barrier of drain-to-body junctions while maintaining the latch-up immunity. In cooperation with the Analog Signal Processing Group, the SiMICS has also reported 1-D photo imagers in a 25 GHz transmission frequency silicon bipolar process for remote sensors with wireless links.

The research activities are supported by measurement capabilities including an HP8510C with a maximum operating frequency of 26.5 GHz, an HP8563E which can handle upto 26.5 GHz, a 20 GHz frequency synthesizer, an HP8970B and an HP8971C for noise measurements upto 26.5 GHz, an HP5412T digitizing oscilloscope with a 20 GHz bandwidth, a cascade probe station, and two Maurie computer controlled matching networks for automated noise parameter and power measurements, once again upto 20 GHz.


Our activities are currently sponsored by Toyota, Defense Advanced Research Project Agency (DARPA), Semiconductor research Corporation (SRC), National Science Foundation (NSF), Navy, as well as numerous U.S. semiconductor companies, including International Business Machines Inc., Texas Instruments Inc., Analog Devices Inc., and Rockwell international Inc.

Last updated: February 23, 2006

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